Fast through-bond diffusion of nitrogen in silicon

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Diffusion of implanted nitrogen in silicon

Growth of thinner gate oxides and their thickness control is one of many challenges in scaling technologies today. Nitrogen implantation can be used to control gate oxide thicknesses. This article reports a study on the fundamental behavior of nitrogen diffusion in silicon. Nitrogen was implanted as N2 1 at a dose of 5310 ions/cm at 40 and 200 keV through a 50 Å screen oxide into Czochralski si...

متن کامل

Physical integrated diffusion-oxidation model for implanted nitrogen in silicon

Scaling the gate oxide thickness is one of many process development challenges facing device engineers today. Nitrogen implantation has been used to control gate oxide thickness. By varying the dose of the nitrogen implant, process engineers can have multiple gate oxide thicknesses in the same process. Although it has been observed that nitrogen retards gate oxidation kinetics, the physics of h...

متن کامل

Evaluation of Nitrogen Diffusion in Plasma Nitrided Iron by Various

   Diffusion of nitrogen in plasma nitrided iron and structural evolution during the nitriding process were evaluated by several characterization techniques including optical microscopy (OM), microhardness depth profiling (HDP), scanning electron microscopy (SEM), x-ray diffraction (XRD), glow discharge optical emission spectroscopy (GDOES), and secondary ion mass spectroscopy (SIMS). Plasma ni...

متن کامل

Natural products containing a nitrogen-nitrogen bond.

As of early 2013, over 200 natural products are known to contain a nitrogen-nitrogen (N-N) bond. This report categorizes these compounds by structural class and details their isolation and biological activity.

متن کامل

Range Distributions of Low-energy Nitrogen and Oxygen Ions in Silicon (RESEARCH NOTE)

The range distributions of low-energy nitrogen and oxygen (2-3 keV) ions is silicon are measured and compared with these available in theories. The nitrogen distribution is very close to a Gaussian distribution as predicted by theory. The oxygen profile however, indicates a surface localized peak along with a shoulder and a long tail into the sample. The surface peak is beleived to he the resul...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Applied Physics Letters

سال: 2001

ISSN: 0003-6951,1077-3118

DOI: 10.1063/1.1345828